讲座报告|Interface science and engineering for advanced filed effective transistors

发布时间: 2019-05-23

讲座题目: Interface science and engineering for advanced filed effective transistors 

主讲人:李秀妍

报告时间:2019524

报告地点:闵行校区信息楼133办公室

主持人:田博博  

主讲人简介:

李秀妍分别于20092012年于华东师范大学、同济大学物理系取得学士、硕士学位,2015年于日本东京大学取得工学博士学位,201512月至20181月在美国罗格斯大学从事博士后研究工作。现任上海交通大学微纳电子学系长聘教轨副教授,博士生导师。主要从事半导体器件工艺及物理的相关研究。研究方向涉及高迁移率小尺寸CMOS器件、新型逻辑运算和存储器件(如负电容晶体管、铁电存储器等)、以及高功率宽禁带半导体器件的基础物理研究和器件制备。迄今为止以第一作者在知名学术期刊发表论文十余篇,在知名国际学术会议口头报告成果二十余次(包括IEDM三次),获得学术相关奖励和荣誉六项。  

讲座摘要:

The scaling trend of CMOS devices is now being delayed, and it is said the Moore’s law has ended. For the further development of integrated circuit, not only the lithographic miniaturization or 3-dimensionl devices but also the innovation of devices and/or materials are required. In this talk, we would like to discuss our recent studies on the interface science and engineering associated with incorporation of high-k and ferroelectric materials in filed effective transistors toward high performance and low power CMOS technologies. They are quite interesting in terms of physics behind as well as their potential applications.

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